ELECTRON TRAPPING DETRAPPING WITHIN THIN SIO2-FILMS IN THE HIGH-FIELD TUNNELING REGIME

被引：50
作者：
OLIVO, P
RICCO, B
SANGIORGI, E
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期
关键词：
D O I：
10.1063/1.332755
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5267 / 5276
页数：10
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