ELECTRON TRAPPING DETRAPPING WITHIN THIN SIO2-FILMS IN THE HIGH-FIELD TUNNELING REGIME

被引：49

作者：

OLIVO, P

RICCO, B

SANGIORGI, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5267 / 5276

页数：10

相关论文

共 28 条

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES
AITKEN, JM
YOUNG, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198
[2] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2
AITKEN, JM
YOUNG, DR
PAN, K
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391
[3] Wannier Exciton in an electric field. I. Optical absorption by bound and continuum states
Blossey, Daniel F.
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 3976 - 3990
[4] HOLE TRAPPING IN THE BULK OF SIO2 LAYERS AT ROOM-TEMPERATURE
DEKEERSMAECKER, RF
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 532 - 539
[5] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN
DISTEFANO, TH
SHATZKES, M
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687
[6] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
FEIGL, FJ
YOUNG, DR
DIMARIA, DJ
LAI, S
CALISE, J
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682
[7] CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2
HARARI, E
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 601 - 603
[8] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2
HARARI, E
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2478 - 2489
[9] Harrison WA., 1978, PHYS SIO2 ITS INTERF, P105
[10] CHEMICAL AND ELECTRONIC-STRUCTURES OF THE SIO2-SI INTERFACE
HOLLINGER, G
[J]. APPLIED SURFACE SCIENCE, 1981, 8 (03) : 318 - 336