GROWTH OF HG1-XMNXTE CRYSTALS BY THE TRAVELING HEATER METHOD

被引：7
作者：
GILLE, P
ROSSNER, U
PUHLMANN, N
NIEBSCH, H
PIOTROWSKI, TT
机构：
[1] HUMBOLDT UNIV BERLIN,INST PHYS,D-10115 BERLIN,GERMANY
[2] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 03期
关键词：
D O I：
10.1088/0268-1242/10/3/020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Growth of Hg1-xMnxTe (x approximate to 0.10) crystals by the travelling heater method (THM) is reported using a source material preparation process that has been previously developed for Hg1-xCdxTe. Feed ingots, as well as THM single crystals, were characterized with special emphasis on the compositional homogeneity that proved to be superior to the usual results with crystals grown by the Bridgman method so far.
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页码：353 / 357
页数：5
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