PHOTOEMISSION OBSERVATION OF NA-INDUCED STATES IN THE BAND-GAP AND EVIDENCE FOR CHARGE-TRANSFER IN NA/GAP(110)

被引：12
|
作者：
EVANS, DA
LAPEYRE, GJ
HORN, K
机构：
[1] Fritz-Haber-Institute der Max-Planck-Gesellschaft
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.48.1939
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Na adsorption on GaP(110) is shown to induce a photoemission peak in the region of the band gap above the valence-band maximum. This peak is interpreted as arising from the formerly empty dangling-bond surface state, which is occupied and lowered in energy by interaction with the Na 3s level. The interaction between Ga and the Na substrate atoms is reflected in the appearance of a shoulder on the Ga 3d core-level line and two separate Na 2p emission lines. These data, which are interpreted by recourse to recent self-consistent electronic-structure calculations, provide strong evidence for charge transfer in the bonding of Na to GaP.
引用
收藏
页码：1939 / 1942
页数：4
相关论文
共 50 条
  • [21] RESONANT-PHOTOEMISSION STUDY OF SNO2 - CATIONIC ORIGIN OF THE DEFECT BAND-GAP STATES
    THEMLIN, JM
    SPORKEN, R
    DARVILLE, J
    CAUDANO, R
    GILLES, JM
    JOHNSON, RL
    PHYSICAL REVIEW B, 1990, 42 (18): : 11914 - 11925
  • [22] Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission
    Morris, D
    Dixon, R
    Jones, FH
    Dou, Y
    Egdell, RG
    Downes, SW
    Beamson, G
    PHYSICAL REVIEW B, 1997, 55 (24): : 16083 - 16087
  • [23] Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs
    N. N. Ageeva
    I. L. Bronevoi
    D. N. Zabegaev
    A. N. Krivonosov
    Semiconductors, 2017, 51 : 565 - 570
  • [24] New method for observation of interface states in the semiconductor band-gap: XPS measurements under biases
    Kobayashi, H
    Yamashita, Y
    Nakato, Y
    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1997, 44 (02): : 201 - 206
  • [25] Photocarrier-induced band-gap renormalization and ultrafast charge dynamics in black phosphorus
    Roth, S.
    Crepaldi, A.
    Puppin, M.
    Gatti, G.
    Bugini, D.
    Grimaldi, I
    Barrilot, T. R.
    Arrell, C. A.
    Frassetto, F.
    Poletto, L.
    Chergui, M.
    Marini, A.
    Grioni, M.
    2D MATERIALS, 2019, 6 (03)
  • [26] Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs
    Ageeva, N. N.
    Bronevoi, I. L.
    Zabegaev, D. N.
    Krivonosov, A. N.
    SEMICONDUCTORS, 2017, 51 (05) : 565 - 570
  • [27] TRANSFER MECHANISMS OF NON-EQUILIBRIUM CHARGE-CARRIERS IN GRADED BAND-GAP SEMICONDUCTORS
    BASYK, AI
    KOVALENKO, VF
    PEKA, GP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 429 - 435
  • [28] ORIGIN OF THE BAND-GAP IN THE NEGATIVE CHARGE-TRANSFER-ENERGY COMPOUND NACUO2
    MIZOKAWA, T
    NAMATAME, H
    FUJIMORI, A
    AKEYAMA, K
    KONDOH, H
    KURODA, H
    KOSUGI, N
    PHYSICAL REVIEW LETTERS, 1991, 67 (12) : 1638 - 1641
  • [29] APPLICATION OF THE ENERGY-GAP LAW TO THE DECAY OF CHARGE-TRANSFER EXCITED-STATES
    CASPAR, JV
    KOBER, EM
    SULLIVAN, BP
    MEYER, TJ
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1982, 104 (02) : 630 - 632
  • [30] Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage
    Li, Peng
    Wang, Xiaolei
    Zhang, Xiaolei
    Zhang, Lixia
    Yang, Xuwei
    Zhao, Bing
    FRONTIERS IN CHEMISTRY, 2019, 7
12345