NICKEL CHROMIUM INTERFACE RESOLUTION IN AUGER DEPTH PROFILES

被引:36
作者
MITCHELL, DF
SPROULE, GI
机构
关键词
D O I
10.1016/0039-6028(86)90271-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:238 / 252
页数:15
相关论文
共 19 条
[1]   DEPTH RESOLUTION OF SPUTTER PROFILING [J].
ANDERSEN, HH .
APPLIED PHYSICS, 1979, 18 (02) :131-140
[2]  
BENNINGHOVEN A, 1971, Z PHYS, V230, P403
[3]  
Blattner R. J., 1979, Surface and Interface Analysis, V1, P32, DOI 10.1002/sia.740010107
[4]   SPUTTER PROFILING THROUGH NI-FE INTERFACES BY AUGER-ELECTRON SPECTROSCOPY [J].
CHUANG, TJ ;
WANDELT, K .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) :277-284
[5]   SPUTTER-INDUCED ROUGHNESS IN THERMAL SIO2 DURING AUGER SPUTTER PROFILING STUDIES OF THE SI-SIO2 INTERFACE [J].
COOK, CF ;
HELMS, CR ;
FOX, DC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :44-46
[6]   INTERFACE DEPTH RESOLUTION OF AUGER SPUTTER PROFILED NI/CR INTERFACES - DEPENDENCE ON ION-BOMBARDMENT PARAMETERS [J].
FINE, J ;
LINDFORS, PA ;
GORMAN, ME ;
GERLACH, RL ;
NAVINSEK, B ;
MITCHELL, DF ;
CHAMBERS, GP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (03) :1413-1417
[7]   DEPTH-PROFILING OF CU-NI SANDWICH SAMPLES BY SECONDARY ION MASS-SPECTROMETRY [J].
HOFER, WO ;
LIEBL, H .
APPLIED PHYSICS, 1975, 8 (04) :359-360
[8]   APPLICATION OF AUGER DEPTH PROFILING ON THE AL-SIO2 INTERFACE [J].
JUNG, T ;
TITEL, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01) :85-90
[9]   RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS [J].
LITTMARK, U ;
HOFER, WO .
NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :329-342
[10]   INFLUENCE OF ION-BOMBARDMENT ON DEPTH RESOLUTION IN AUGER-ELECTRON SPECTROSCOPY ANALYSIS OF THIN GOLD-FILMS ON NICKEL [J].
MATHIEU, HJ ;
MCCLURE, DE ;
LANDOLT, D .
THIN SOLID FILMS, 1976, 38 (03) :281-294