ELECTROMIGRATION OF NI IN AL THIN-FILM CONDUCTORS

被引：12

作者：

DHEURLE, FM ^{[1
]}

GANGULEE, A ^{[1
]}

ALIOTTA, CF ^{[1
]}

RANIERI, VA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 11期

关键词：

D O I：

10.1063/1.321515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4845 / 4846

页数：2

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[9] KIRKENDALL STUDY OF ELECTROMIGRATION IN THIN-FILMS [J].

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