ULTRA-SHALLOW DEPTH PROFILING WITH TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY

被引：7

作者：

BENNETT, J ^{[1
]}

DAGATA, JA ^{[1
]}

机构：

[1] NATL INST STAND & TECHNOL,DIV PRECIS ENGN,GAITHERSBURG,MD 20899

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.587143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 20 nm of material. The utility of TOF-SIMS ultra-shallow depth profiling is demonstrated on GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to an UV/ozone treatment.

引用

页码：214 / 218

页数：5

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