CHEMICAL BEAM EPITAXIAL-GROWTH OF VERY LOW THRESHOLD GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM WELL LASERS

被引：29
作者：
TSANG, WT
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 16期
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D O I：
10.1063/1.97455
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1010 / 1012
页数：3
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