NATIVE-OXIDE STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS

被引：87

作者：

DALLESASSE, JM ^{[1
]}

HOLONYAK, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the room-temperature continuous (cw) operation of native-oxide single-stripe Al(x)Ga(l)-xAs-GaAs quantum well heterostructure (QWH) lasers. The device quality native oxide is produced by the conversion of high Al composition Al(x)Ga(l)-xAs (chi-approximately 0.8) confining layers via H2O vapor oxidation (400-degrees-C) in a N2 carrier gas. The 10-mu-m-wide cw 300 K QWH lasers, which are fabricated by simplified processing, have excellent spectral quality and have been operated to powers in excess of 100 mW per facet.

引用

页码：394 / 396

页数：3

共 7 条

[1] STABILITY OF ALAS IN ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].