POLY-SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：18
|
作者：
FA, CH
JEW, TT
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 02期
关键词：
D O I：
10.1109/T-ED.1966.15682
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：290 / +
页数：1
相关论文
共 50 条
  • [41] A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor
    Kanechika, Masakazu
    Sugimoto, Masahiro
    Soejima, Narumasa
    Ueda, Hiroyuki
    Ishiguro, Osamu
    Kodama, Masahito
    Hnyashi, Eiko
    Itoh, Kenji
    Uesugi, Tsutomu
    Kachi, Tetsu
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (20-24): : L503 - L505
  • [42] PRESSURE-SENSITIVE INSULATED GATE FIELD-EFFECT TRANSISTOR (PSIGFET)
    SUMINTO, JT
    KO, WH
    SENSORS AND ACTUATORS A-PHYSICAL, 1990, 21 (1-3) : 126 - 132
  • [43] THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF
    GEURST, JA
    SOLID-STATE ELECTRONICS, 1966, 9 (02) : 129 - +
  • [44] SUPPRESSED GATE CURRENT IN A SUPERLATTICE-INSULATED-GATE FIELD-EFFECT TRANSISTOR ON INP
    BROWN, ER
    CHEN, CL
    MAHONEY, LJ
    MAKI, PA
    NICHOLS, KB
    APPLIED PHYSICS LETTERS, 1995, 66 (18) : 2352 - 2354
  • [45] CURRENT VOLTAGE AND CAPACITANCE VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS
    BAEK, J
    SHUR, MS
    DANIELS, RR
    ARCH, DK
    ABROKWAH, JK
    TUFTE, ON
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) : 1650 - 1657
  • [46] DISTRIBUTION OF MOBILE CARRIERS IN PINCH-OFF REGION OF AN INSULATED-GATE FIELD-EFFECT TRANSISTOR AND ITS INFLUENCE ON DEVICE BREAKDOWN
    ARMSTRONG, GA
    MAGOWAN, JA
    SOLID-STATE ELECTRONICS, 1971, 14 (08) : 723 - +
  • [47] INSULATED GATE FIELD EFFECT TRANSISTOR INTEGRATED CIRCUITS WITH SILICON GATES
    FAGGIN, F
    KLEIN, T
    VADASZ, L
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) : 236 - &
  • [48] Novel poly-silicon nanowire field effect transistor for biosensing application
    Hsiao, Cheng-Yun
    Lin, Chih-Heng
    Hung, Cheng-Hsiung
    Su, Chun-Jung
    Lo, Yen-Ren
    Lee, Cheng-Che
    Lin, Horng-Chin
    Ko, Fu-Hsiang
    Huang, Tiao-Yuan
    Yang, Yuh-Shyong
    BIOSENSORS & BIOELECTRONICS, 2009, 24 (05): : 1223 - 1229
  • [49] A NEW INSULATED-GATE INVERTED-STRUCTURE MODULATION-DOPED ALGAAS-GAAS-N-ALGAAS FIELD-EFFECT TRANSISTOR
    KINOSHITA, H
    SANO, Y
    ISHIDA, T
    NISHI, S
    AKIYAMA, M
    KAMINISHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L836 - L838
  • [50] NEW EFFECT IN INSULATED-GATE FIELD-EFFECT TRANSISTORS - TRANSVERSE VOLTAGE ANISOTROPY AT INVERTED SEMICONDUCTOR SURFACE
    HOLMKENNEDY, JW
    PHYSICAL REVIEW LETTERS, 1974, 32 (03) : 111 - 114
12345