POLY-SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：18

|

作者：

FA, CH

JEW, TT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 02期

关键词：

D O I：

10.1109/T-ED.1966.15682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：290 / +

页数：1

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