Rapid thermal processing of alpha-hexathienylene thin-film transistors

In this paper we show that rapid thermal annealing of as-deposited p-type alpha-hexathienylene (alpha-6T) thin-film transistors (TFTs) can yield devices with on/off current ratios higher than 10(6). Such high on/off ratios, together with switching times of similar to 10 mu s and compatibility of the active material with flexible plastic substrates, render alpha-6T TFTs potential candidates as switching devices in plastic-substrate-based active-matrix displays. We also report on the morphological, structural, and electrical characteristics of alpha-6T films and TFTs when subjected to rapid thermal heating above the melting point of alpha-6T.