SURFACE-TOPOGRAPHY CHANGES DURING THE GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY

被引：70
作者：
SMITH, GW
PIDDUCK, AJ
WHITEHOUSE, CR
GLASPER, JL
KEIR, AM
PICKERING, C
机构：
[1] DRA Electronics Division, RSRE Malvern, Malvern, Worcs WR14 3PS, St. Andrews Road
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 25期
关键词：
D O I：
10.1063/1.105706
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Changes in surface roughness taking place during (001) GaAs molecular beam epitaxy growth have been studied in situ using laser light scattering and ex situ using atomic force microscopy (AFM). Substantial increases in light scattering are found to occur firstly during oxide thermal desorption, associated with surface pit formation, and secondly during continued layer growth, due to the buildup of atomic step arrays. Monolayer height GaAs steps are readily resolved using AFM in air.
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页码：3282 / 3284
页数：3
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