SECONDARY-ELECTRON YIELD OF SIO2 AND SI3N4 THIN-FILMS FOR CONTINUOUS DYNODE ELECTRON MULTIPLIERS

被引：68

作者：

FIJOL, JJ ^{[1
]}

THEN, AM ^{[1
]}

TASKER, GW ^{[1
]}

SOAVE, RJ ^{[1
]}

机构：

[1] NATL NANOFABRICAT FACIL CORNELL, ITHACA, NY 14853 USA

来源：

APPLIED SURFACE SCIENCE | 1991年 / 48-9卷

关键词：

D O I：

10.1016/0169-4332(91)90376-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have evaluated the secondary electron yield (delta) versus primary electron energy (E(p)) of native oxide (SiO(x)), thermal oxide (SiO2), and LPCVD Si3N4 films for use as electron-emissive layers in thin-film electron multipliers. Measurements of delta(E(p)) were made using the retarding potential method with the electron gun operated in a pulsed mode. The maximum yield (delta-m) in the energy range of interest E(p) = 20-400 eV for SiO(x), Si3N4, and SiO2 films was 1.5, 2.9 and 3.8, respectively. For comparison, delta-m for reduced lead silicate glass (RLSG), used in conventional electron multipliers, was 2.5. While delta-m > 1 for each of these materials, indicating that all should support electron multiplication, both the SiO2 and Si3N4 films have delta(E(p)) characteristics which are superior to RLSG. Gain modeling indicates that electron-emissive layers of SiO2 or Si3N4 show potential for significantly enhancing the performance of thin-film electron multipliers over conventional RLSG devices.

引用

页码：464 / 471

页数：8

共 17 条

[1] MECHANISM OF CHANNEL ELECTRON MULTIPLICATION [J].