HIGH-SPEED REACTIVE ION ETCHING USING A MAGNETRON DISCHARGE

被引:0
作者
HORIIKE, Y
OKANO, H
机构
来源
JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 1984年 / 13卷
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:249 / &
相关论文
共 19 条
[1]  
BRUCE RH, 1982, PLASMA PROCESSING, P336
[2]   ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].
COBURN, JW ;
WINTERS, HF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196
[3]   SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].
EPHRATH, LM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1419-1421
[4]  
Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[5]   HIGH-RATE REACTIVE ION ETCHING OF AL2O3 AND SI [J].
HEIMAN, N ;
MINKIEWICZ, V ;
CHAPMAN, B .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03) :731-734
[6]  
HINSON LID, 1983, SPR EL SOC M, P254
[7]  
HIROBE K, 1982, 4TH P S DRY PROC, P45
[8]   HIGH-RATE REACTIVE ION ETCHING OF SIO2 USING A MAGNETRON DISCHARGE [J].
HORIIKE, Y ;
OKANO, H ;
YAMAZAKI, T ;
HORIE, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L817-L820
[9]  
Horiike Y., 1982, Microcircuit Engineering 82. International Conference on Microlithography, P203
[10]  
HORIIKE Y, 1984, MICROSTRUCTURE SCI, V8, P448