SELF-INTERSTITIAL AND VACANCY CONTRIBUTIONS TO SILICON SELF-DIFFUSION DETERMINED FROM THE DIFFUSION OF GOLD IN SILICON

被引:53
作者
MOREHEAD, F [1 ]
STOLWIJK, NA [1 ]
MEYBERG, W [1 ]
GOSELE, U [1 ]
机构
[1] MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 80,FED REP GER
关键词
D O I
10.1063/1.94074
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:690 / 692
页数:3
相关论文
共 19 条
[1]   DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].
ANTONIADIS, DA ;
MOSKOWITZ, I .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796
[2]   OXIDATION-INDUCED POINT-DEFECTS IN SILICON [J].
ANTONIADIS, DA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1093-1097
[3]   MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J].
FRANK, FC ;
TURNBULL, D .
PHYSICAL REVIEW, 1956, 104 (03) :617-618
[4]  
Gosele U., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P55
[5]   DIFFUSION OF GOLD IN SILICON - A NEW MODEL [J].
GOSELE, U ;
MOREHEAD, F ;
FRANK, W ;
SEEGER, A .
APPLIED PHYSICS LETTERS, 1981, 38 (03) :157-159
[6]   MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON [J].
GOSELE, U ;
FRANK, W ;
SEEGER, A .
APPLIED PHYSICS, 1980, 23 (04) :361-368
[7]  
GOSELE U, 1981, SEMICONDUCTOR SILICO, P766
[8]   DIFFUSION OF GOLD IN SILICON [J].
HILL, M ;
LIETZ, M ;
SITTIG, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1579-1587
[9]   FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].
HU, SM .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573
[10]   DIFFUSION MECHANISM OF NICKEL AND POINT-DEFECTS IN SILICON [J].
KITAGAWA, H ;
HASHIMOTO, K ;
YOSHIDA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02) :276-280