ABSORPTION EDGE OF GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD

被引：49

作者：

PAIGE, EGS

REES, HD

机构：

来源：

PHYSICAL REVIEW LETTERS | 1966年 / 16卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.16.444

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：444 / &

共 11 条

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[4]

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Varga, A. J. ;

Schwarz, R. F. .

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[6] DETERMINATION OF THE EFFECTIVE ELECTRON MASS IN GAAS BY THE INFRA-RED FARADAY EFFECT [J].

MOSS, TS ;

WALTON, AK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 74 (475) :131-133

[7] OPTICAL ABSORPTION EDGE IN GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J].

MOSS, TS .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2136-&

[8]

PENCHINA C, 1964, B AM PHYS SOC, V9, P714

[9] FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM [J].

SERAPHIN, BO ;

HESS, RB .

PHYSICAL REVIEW LETTERS, 1965, 14 (05) :138-&

[10] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV [J].

STURGE, MD .

PHYSICAL REVIEW, 1962, 127 (03) :768-+

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