CHARACTERIZATION OF DEVICE PARAMETERS IN HIGH-TEMPERATURE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BETA-SIC THIN-FILMS

被引：99
|
作者：
PALMOUR, JW [1 ]
KONG, HS [1 ]
DAVIS, RF [1 ]
机构：
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期
关键词：
D O I：
10.1063/1.341731
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2168 / 2177
页数：10
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