CHARACTERISTICS OF P-DOPED POLYSILICON WITH B2H6 USED AS INSITU DOPANT SOURCE

被引：8

作者：

CHAPPELOW, RE

LIN, PT

机构：

[1] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

[2] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

关键词：

D O I：

10.1149/1.2132966

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：913 / 916

页数：4

共 4 条

EVERSTEY.FC ;

PUT, BH .

[2] SILICON GATE TECHNOLOGY [J].

FAGGIN, F ;

KLEIN, T .

[3]

HOEFLER DC, 1971, ELECTRONIC NEWS 0118

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+