A CURRENT-CONTROLLED NEGATIVE-RESISTANCE EFFECT IN INDIUM ANTIMONIDE

被引：4
作者：
EASTMAN, LF
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 01期
关键词：
D O I：
10.1109/T-ED.1966.15644
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：117 / +
页数：1
相关论文
共 5 条
[1]   SOME OBSERVATIONS OF GROWING OSCILLATIONS IN ELECTRON-HOLE PLASMA [J].
ANCKERJOHNSON, B .
PHYSICAL REVIEW LETTERS, 1962, 9 (12) :485-&
[2]   A DOUBLE INJECTION NEGATIVE RESISTANCE IN P-TYPE INDIUM ANTIMONIDE AT 77 DEGREES K [J].
ANDO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (12) :757-&
[3]   A NEW NEGATIVE RESISTANCE EFFECT IN INDIUM ANTIMONIDE [J].
EASTMAN, LF .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (07) :761-&
[4]   MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].
GUNN, JB .
SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91
[5]  
LARRABEE RD, 1965, 7 P INT C PHYS SEM
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