MATHEMATICAL SIMULATION OF DIFFUSION OF 2 CHARGED IMPURITIES IN A SEMICONDUCTOR ALLOWING FOR AN INTERNAL ELECTRIC-FIELD

被引：0
作者：
GALANIN, MP
MALKOVICH, RS
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 08期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：911 / 914
页数：4
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