ALXGA1-XAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN ON SI SUBSTRATE

被引：36
作者：
DEPPE, DG
CHAND, N
VANDERZIEL, JP
ZYDZIK, GJ
机构：
[1] AT and T Bell Laboratories, Murray Hill, NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 08期
关键词：
D O I：
10.1063/1.102698
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Data are presented demonstrating room-temperature operation of Al xGa1-xAs-GaAs vertical-cavity surface-emitting lasers grown on Si substrates. The device structures are grown using molecular beam epitaxy and a grown-in quarter-wave AlAs-GaAs stack is used as the n-side reflector and a nonalloyed Ag dot used as the p-side reflector/contact. Pulsed threshold currents of ∼125 mA are obtained for a 15-μm-diam device.
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页码：740 / 742
页数：3
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