PHOTOINDUCED AND FIELD-INDUCED RANDOM FIELD IN RELAXATION CASE SEMICONDUCTORS

被引：0
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作者：
DROZHOV, YP
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 102卷 / 02期
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D O I：
10.1002/pssa.2211020235
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T [工业技术];
学科分类号：
08 ;
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页码：733 / 739
页数：7
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