DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE

[1] DEEP DEPLETED SOI MOSFETS WITH BACK POTENTIAL CONTROL - A NUMERICAL-SIMULATION [J]. SOLID-STATE ELECTRONICS, 1985, 28 (10) : 1031 - 1037

[2] CELLER GK, 1986, 1986 IEEE SOS SOI WO

[3] Cristoloveanu S., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P49

[4] CRISTOLOVEANU S, 1987, UNPUB J APPL PHYS

[5] CALCULATED THRESHOLD-VOLTAGE CHARACTERISTICS OF AN XMOS TRANSISTOR HAVING AN ADDITIONAL BOTTOM GATE [J]. SOLID-STATE ELECTRONICS, 1984, 27 (8-9) : 827 - 828

[1] DEEP DEPLETED SOI MOSFETS WITH BACK POTENTIAL CONTROL - A NUMERICAL-SIMULATION [J]. SOLID-STATE ELECTRONICS, 1985, 28 (10) : 1031 - 1037

[2] CELLER GK, 1986, 1986 IEEE SOS SOI WO

[3] Cristoloveanu S., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P49

[4] CRISTOLOVEANU S, 1987, UNPUB J APPL PHYS

[5] CALCULATED THRESHOLD-VOLTAGE CHARACTERISTICS OF AN XMOS TRANSISTOR HAVING AN ADDITIONAL BOTTOM GATE [J]. SOLID-STATE ELECTRONICS, 1984, 27 (8-9) : 827 - 828