DOUBLE-GATE SILICON-ON-INSULATOR TRANSISTOR WITH VOLUME INVERSION - A NEW DEVICE WITH GREATLY ENHANCED PERFORMANCE

被引：571
作者：
BALESTRA, F
CRISTOLOVEANU, S
BENACHIR, M
BRINI, J
ELEWA, T
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期
关键词：
D O I：
10.1109/EDL.1987.26677
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：410 / 412
页数：3
相关论文
共 5 条
[1]   DEEP DEPLETED SOI MOSFETS WITH BACK POTENTIAL CONTROL - A NUMERICAL-SIMULATION [J].
BALESTRA, F ;
BRINI, J ;
GENTIL, P .
SOLID-STATE ELECTRONICS, 1985, 28 (10) :1031-1037
[2]  
CELLER GK, 1986, 1986 IEEE SOS SOI WO
[3]  
Cristoloveanu S., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P49
[4]  
CRISTOLOVEANU S, 1987, UNPUB J APPL PHYS
[5]   CALCULATED THRESHOLD-VOLTAGE CHARACTERISTICS OF AN XMOS TRANSISTOR HAVING AN ADDITIONAL BOTTOM GATE [J].
SEKIGAWA, T ;
HAYASHI, Y .
SOLID-STATE ELECTRONICS, 1984, 27 (8-9) :827-828
1