EFFECT OF SILICON-GATE RESISTANCE ON FREQUENCY-RESPONSE OF MOS-TRANSISTORS

被引：0

|

作者：

LIN, HC

ARZOUMANIAN, YF

HALSOR, JL

GIULIANO, MN

BENZ, HF

机构：

[1] UNIV MARYLAND, DEPT ELECT ENGN, COLLEGE PK, MD 20740 USA

[2] NASA, LANGLEY RES CTR, HAMPTON, VA USA

[3] WESTINGHOUSE ELECT CORP, BALTIMORE, MD USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：255 / 264

页数：10

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