LAYERED AND HOMOGENEOUS FILMS OF ALUMINUM AND ALUMINUM SILICON WITH TITANIUM AND TUNGSTEN FOR MULTILEVEL INTERCONNECTS

被引：19

作者：

GARDNER, DS ^{[1
]}

MICHALKA, TL ^{[1
]}

SARASWAT, KC ^{[1
]}

BARBEE, TW ^{[1
]}

MCVITTIE, JP ^{[1
]}

MEINDL, JD ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期

关键词：

D O I：

10.1109/JSSC.1985.1052281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：94 / 103

页数：10

共 39 条

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[18]

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IYER SS, 1984, 1984 P INT REL PHYS

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