CURRENT-VOLTAGE CHARACTERISTICS OF A P-I-N-DIODE UNDER CONDITIONS OF VERY FAST CARRIER INJECTION

被引:0
作者
ABRAMOV, AA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 11期
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O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:1250 / 1253
页数:4
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  • [1] ABRAMOV AA, 1981, SOV PHYS SEMICOND+, V15, P1196
  • [2] ARAI M, 1971, JAPAN J APPL PHYS S, V40, P93
  • [3] EFFECTS OF DIFFUSION ON DOUBLE INJECTION IN INSULATORS
    BARON, R
    [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A272 - &
  • [4] Baron R., 1970, SEMICONDUCTORS SEMIM, V6, P201, DOI [10.1016/S0080-8784(08)62633-2, DOI 10.1016/S0080-8784(08)62633-2]
  • [5] Davis E.M., 1958, J ELECTRON CONTR, V4, P17
  • [6] ON THE RECOMBINATION OF ELECTRONS AND HOLES AT TRAPS WITH FINITE RELAXATION-TIME
    DHARIWAL, SR
    KOTHARI, LS
    JAIN, SC
    [J]. SOLID-STATE ELECTRONICS, 1981, 24 (08) : 749 - 752
  • [7] KARAKUSHAN EI, 1964, RADIOTEKH ELEKTRON, V9, P2027
  • [8] KAZARINOV RF, 1968, SOV PHYS SEMICOND+, V1, P1078
  • [9] THE FORWARD CHARACTERISTIC OF THE PIN DIODE
    KLEINMAN, DA
    [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 685 - 706
  • [10] Lampert M.A., 1970, SEMICONDUCT SEMIMET, V6, P1, DOI 10.1016/S0080-8784(08)62630-7