MEASUREMENT OF INSULATED GATE FIELD-EFFECT TRANSISTOR IN WEAK INVERSION FOR DETERMINING SURFACE STATE DENSITY

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作者：

PASZTOR, G

机构：

来源：

ACTA TECHNICA ACADEMIAE SCIENTIARUM HUNGARICAE | 1975年 / 80卷 / 1-2期

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P3 [地球物理学]; P59 [地球化学];

学科分类号：

0708 ; 070902 ;

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页码：237 / 250

页数：14

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