COMPARATIVE STUDY OF SI(111), SILICON-OXIDE, SIC AND SI3N4 SURFACES BY SECONDARY ION MASS-SPECTROSCOPY (SIMS)

被引：50

作者：

BENNINGHOVEN, A ^{[1
]}

SICHTERMANN, W ^{[1
]}

STORP, S ^{[1
]}

机构：

[1] UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER

来源：

THIN SOLID FILMS | 1975年 / 28卷 / 01期

关键词：

D O I：

10.1016/0040-6090(75)90275-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：59 / 64

页数：6

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