SYNTHESIS AND COMPOSITIONAL TUNING OF THE BAND PROPERTIES OF ISOSTRUCTURAL TMA-SNSXSE1-X-1 NANOPOROUS MATERIALS

被引：40

作者：

AHARI, H

OZIN, GA

BEDARD, RL

PETROV, S

YOUNG, D

机构：

[1] UNIV TORONTO,LASH MILLER CHEM LABS,MAT CHEM RES GRP,TORONTO,ON M5S 1A1,CANADA

[2] UNIVERSAL OIL PROD,DES PLAINES,IL 60017

来源：

ADVANCED MATERIALS | 1995年 / 7卷 / 04期

关键词：

D O I：

10.1002/adma.19950070404

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Crystalline, nanoporous tin chalcogenide semiconducting materials (see Figure) in which the band gap can be fine tuned chemically are reported. Variation of the proportions of slfur and selenium in the title materials results in the absorpton maxima red shifting with increasing selenium content over a range of 100 nm (350–450 nm). (Figure Presented.) Copyright © 1995 Verlag GmbH & Co. KGaA, Weinheim

引用

页码：370 / 374

页数：5

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