TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DIAMOND NUCLEATION ON 6H-SIC SINGLE-CRYSTAL WITH POSSIBILITY OF EPITAXY

被引：16

作者：

CHANG, L ^{[1
]}

LIN, TS ^{[1
]}

CHEN, JL ^{[1
]}

CHEN, FR ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,MAT RES CTR,HSINCHU 300,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond has been grown on 6H-SiC single crystal wafers by microwave plasma assisted chemical vapor deposition with a negative bias pretreatment. A high nucleation density of diamond on the substrate has been achieved. Cross-sectional transmission electron microscopy was employed to study the interfacial microstructure of diamond on 6H-SiC. Lattice image observations illustrate that diamond is directly formed on the 6H-SiC substrate. The possibility of local epitaxial nucleation of diamond on the 6H-SiC substrate and its crystallography are briefly discussed.

引用

页码：3444 / 3446

页数：3

共 9 条

[1] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].