ORGANO GROUP-13 METAL-COMPLEXES OF D-BLOCK ELEMENTS .7. STABLE ORGANOGALLIUMTETRAHYDROBORATES - NOVEL PRECURSORS FOR THE DEPOSITION OF GALLIUM CONTAINING MIXED-METAL THIN-FILMS

被引：30

作者：

FISCHER, RA

PRIERMEIER, T

SCHERER, W

机构：

[1] Anorganisch-chemisches Institut, Technische Universität München, D-85747 Garching

来源：

JOURNAL OF ORGANOMETALLIC CHEMISTRY | 1993年 / 459卷 / 1-2期

关键词：

D O I：

10.1016/0022-328X(93)86056-N

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Novel, mixed substituted organogallium compounds of the type (R1)(R2)Ga[(CH2)3NR22] (R1, R2 = Cl, BH4, alkyl, eta5-C5H5)(CO)2Fe; R = CH3, C2H5) have been synthesized and fully characterized. These compounds are stabilized by intramolecular adduct formation at the gallium centre. The solid state structures of [(eta5-C5H5)(CO)2]FeGa(CH2)3N(CH3)2](R1) (3a: R1 = C2H5; 3d: R1 = BH4) exhibit Fe-Ga bond lengths of 245.65(4) pm and 237.5(1) pm respectively. The Ga-B distance in 3d amounts to 237.4(3) pm. Remarkably pure Fe/Ga thin films were grown from 3d by low pressure OMCVD. The BH4 group reduces both the decomposition temperature of the single source precursor and the degree of contamination by carbon of the mixed metal thin films.

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页码：65 / 71

页数：7

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