DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE

被引：43
作者：
DIMARIA, DJ [1 ]
FISCHETTI, MV [1 ]
TIERNEY, E [1 ]
BRORSON, SD [1 ]
机构：
[1] MIT,CAMBRIDGE,MA 02139
来源：
PHYSICAL REVIEW LETTERS | 1986年 / 56卷 / 12期
关键词：
D O I：
10.1103/PhysRevLett.56.1284
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1284 / 1286
页数：3
相关论文
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