EFFECT OF CROSS SATURATION ON FREQUENCY FLUCTUATIONS IN A NEARLY SINGLE-MODE SEMICONDUCTOR-LASER

被引：9

作者：

GRAY, GR

AGRAWAL, GP

机构：

[1] Institute of Optics, University of Rochester, Rochester, NY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 03期

关键词：

D O I：

10.1109/68.79754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of side-mode cross saturation on the frequency noise of the main mode is investigated by considering the Langevin rate equations which contain the nonlinear gain with both the self-saturation and cross-saturation terms. When cross saturation is stronger than self saturation, the frequency noise of the main mode is found to be significantly enhanced in the low-frequency regime (< 1 GHz). An increase of more than 20 dB is predicted due to a side mode suppressed by 15-20 dB. The enhanced frequency noise manifests as broadening of the laser linewidth and may affect the performance of coherent optical communication systems.

引用

页码：204 / 206

页数：3

共 13 条

[1] MODE-PARTITION NOISE AND INTENSITY CORRELATION IN A 2-MODE SEMICONDUCTOR-LASER [J].

AGRAWAL, GP .

PHYSICAL REVIEW A, 1988, 37 (07) :2488-2494

[2] EFFECT OF GAIN AND INDEX NONLINEARITIES ON SINGLE-MODE DYNAMICS IN SEMICONDUCTOR-LASERS [J].

AGRAWAL, GP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (11) :1901-1909

[3] GAIN NONLINEARITIES IN SEMICONDUCTOR-LASERS - THEORY AND APPLICATION TO DISTRIBUTED FEEDBACK LASERS [J].

AGRAWAL, GP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :860-868

[4] NOISE IN NEARLY-SINGLE-MODE SEMICONDUCTOR-LASERS [J].

GRAY, G ;

ROY, R .

PHYSICAL REVIEW A, 1989, 40 (05) :2452-2462

[5]

GRAY GR, IN PRESS JOSA B

[6] MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERS [J].

ISHIKAWA, H ;

YANO, M ;

TAKUSAGAWA, M .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :553-555

[7] DEPENDENCE OF THE LINEWIDTH OF A SEMICONDUCTOR-LASER ON THE MODE DISTRIBUTION [J].

KRUGER, U ;

PETERMANN, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (12) :2058-2064

[8] THE SEMICONDUCTOR-LASER LINEWIDTH DUE TO THE PRESENCE OF SIDE MODES [J].

KRUGER, U ;

PETERMANN, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) :2355-2358

[9] STRONG INFLUENCE OF NONLINEAR GAIN ON SPECTRAL AND DYNAMIC CHARACTERISTICS OF INGAASP LASERS [J].

MANNING, J ;

OLSHANSKY, R ;

FYE, DM ;

POWAZINIK, W .

ELECTRONICS LETTERS, 1985, 21 (11) :496-497

[10] NONLINEAR GAIN CAUSED BY CAVITY STANDING WAVE DIELECTRIC GRATING AS AN EXPLANATION OF THE RELATIONSHIP BETWEEN RESONANCE FREQUENCY AND DAMPING RATE OF SEMICONDUCTOR DIODE-LASERS [J].

SU, CB .

APPLIED PHYSICS LETTERS, 1988, 53 (11) :950-952

← 1 2 →