DEPENDENCE OF THRESHOLD CURRENT-DENSITY ON QUANTUM WELL COMPOSITION FOR STRAINED-LAYER INGAAS-GAAS LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:49
作者
BEERNINK, KJ [1 ]
YORK, PK [1 ]
COLEMAN, JJ [1 ]
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.101986
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2585 / 2587
页数:3
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