NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM

被引：113

作者：

OZEKI, M

MOCHIZUKI, K

OHTSUKA, N

KODAMA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 16期

关键词：

D O I：

10.1063/1.99941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1509 / 1511

页数：3

共 11 条

[1] ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J].

BEDAIR, SM ;

TISCHLER, MA ;

KATSUYAMA, T ;

ELMASRY, NA .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :51-53

[2] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J].

DENBAARS, SP ;

BEYLER, CA ;

HARIZ, A ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1987, 51 (19) :1530-1532

[3]

DENHAAS SP, 1986, J CRYST GROWTH, V77, P188

[4]

DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546

[5]

IWAI S, 1988, 14TH P S GALL ARS RE, P191

[6] PYROLYSIS OF TRIMETHYL GALLIUM [J].

JACKO, MG ;

PRICE, SJW .

CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06) :1560-&

[7] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KOBAYASHI, N ;

BENCHIMOL, JL ;

ALEXANDRE, F ;

GAO, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1907-1909

[8]

MOCHIZUKI K, IN PRESS J CRYST GRO

[9] GALLIUM-ARSENIDE THIN-FILMS BY LOW-TEMPERATURE PHOTOCHEMICAL PROCESSES [J].

NISHIZAWA, J ;

KURABAYASHI, T ;

ABE, H ;

SAKURAI, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1572-1577

[10] KINETIC PROCESSES IN ATOMIC-LAYER EPITAXY OF GAAS AND AIA USING A PULSED VAPOR-PHASE METHOD [J].

OZEKI, M ;

MOCHIZUKI, K ;

OHTSUKA, N ;

KODAMA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1184-1186

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