NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM

被引：113
作者：
OZEKI, M
MOCHIZUKI, K
OHTSUKA, N
KODAMA, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 16期
关键词：
D O I：
10.1063/1.99941
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1509 / 1511
页数：3
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