KINETICS OF CONDUCTANCE OF ELECTRON-HOLE DROP SILICON

被引：0
作者：
DROZDOV, NA [1 ]
PATRIN, AA [1 ]
TKACHEV, VD [1 ]
机构：
[1] VI LENIN STATE UNIV,MINSK,BESSR
来源：
DOKLADY AKADEMII NAUK BELARUSI | 1976年 / 20卷 / 08期
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D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
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页码：695 / 698
页数：4
相关论文
共 7 条
  • [1] INFRARED ABSORPTION BY EXCITONS AND THEIR ASSOCIATES IN SILICON
    ASHKINAD.BM
    KRETSU, IP
    PATRIN, AA
    YAROSHET.ID
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 46 (02): : 495 - &
  • [2] Ashkinadze B. M., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2206
  • [3] DROZDOV NA, 1974, 3 RESP K MOL UCH FIZ, P107
  • [4] KELDYSH LV, 1971, EKSITONY POLUPROVODN, P5
  • [5] TRANSIENT PHOTOCONDUCTIVITY ASSOCIATED WITH FORMATION OF ELECTRON-HOLE DROPLETS IN OPTICALLY PUMPED GERMANIUM
    NAKAMURA, A
    MORIGAKI, K
    [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (01) : 41 - 44
  • [6] POKROVSKII YE, 1972, FIZ TVERD TELA+, V14, P3306
  • [7] [No title captured]
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