DESIGN OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS

被引:25
作者
FOSSUM, JG [1 ]
DERBENWICK, GF [1 ]
GREGORY, BL [1 ]
机构
[1] SANDIA LABS,ALBUQUERQUE,NM 87115
关键词
D O I
10.1109/TNS.1975.4328107
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2208 / 2213
页数:6
相关论文
共 5 条
[2]   PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].
DERBENWICK, GF ;
GREGORY, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156
[3]  
FOSSUM JG, 1975, SAND755246 SAND LAB
[4]   PROCESS-CONTROLS FOR RADIATION-HARDENED ALUMINUM GATE BULK SILICON CMOS [J].
GREGORY, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2295-2302
[5]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI