MODEL OF FROZEN OPTICAL BAND RECTIFICATION

被引：0

作者：

DMITRUK, NL ^{[1
]}

LYASHENKO, VI ^{[1
]}

BORKOVSKAYA, OY ^{[1
]}

MAEVA, OI ^{[1
]}

机构：

[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1466 / 1468

页数：3

共 18 条

[1]

But Z. P., 1974, Ukrayins'kyi Fizychnyi Zhurnal, V19, P1093

[2] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J].

DINAN, JH ;

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1971, 26 (02) :587-&

[3]

Dmitruk N. L., 1971, Ukrayins'kyi Fizychnyi Zhurnal, V16, P104

[4]

Dmitruk N. L., 1974, Ukrayins'kyi Fizychnyi Zhurnal, V19, P1375

[5] INVESTIGATION OF SURFACE RECOMBINATION ON EPITAXIAL GAAS FILMS [J].

DMITRUK, NL ;

LYASHENK.VI ;

TERESHEN.AK ;

SPEKTOR, SA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (01) :53-62

[6]

DMITRUK NL, 1972, UKR FIZ ZH, V17, P1356

[7]

DMITRUK NL, 1974, Patent No. 410460

[8]

DMITRUK NL, 1974, GALLIUM ARSENIDE, P264

[9]

DMITRUK NL, 1972, UKR FIZ ZH, V17, P612

[10]

DMITRUK NL, 1974, MEMORY EFFECTS PHOTO, P37

← 1 2 →