A novel precision curvature-compensated bandgap reference

被引：0

作者：

Zhou Zekun ^{[1
]}

Ming Xin ^{[1
]}

Zhang Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 01期

关键词：

high-order curvature compensation; CMOS bandgap reference; temperature coefficient; PSRR;

D O I：

10.1088/1674-4926/31/1/015010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A high precision high-order curvature-compensated bandgap reference compatible with the standard CMOS process, which uses a compensation proportional to VTInT realized by utilizing voltage to current converters and the voltage current characteristics of a base-emitter junction, is presented. Experiment results of the proposed bandgap reference implemented with the CSMC 0.5-mu m CMOS process demonstrate that a temperature coefficient of 3.9 ppm/degrees C is realized at 3.6 V power supply, a power supply rejection ratio of 72 dB is achieved, and the line regulation is better than 0.304 mV/V dissipating a maximum supply current of 42 mu A.

引用

页数：4

共 10 条

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[2]

Filanovsky IM, 1996, PROCEEDINGS OF THE 39TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS I-III, P943, DOI 10.1109/MWSCAS.1996.588110

[3]

Gray PR., 2009, ANAL DESIGN ANALOG I

[4] EXPONENTIAL CURVATURE-COMPENSATED BICMOS BANDGAP REFERENCES [J].