PARTIAL EPITAXIAL-GROWTH OF COBALT GERMANIDES ON (111)GE

被引：34

作者：

HSIEH, YF ^{[1
]}

CHEN, LJ ^{[1
]}

MARSHALL, ED ^{[1
]}

LAU, SS ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT ENGN & COMP SCI,LA JOLLA,CA 92093

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 20期

关键词：

D O I：

10.1063/1.98563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1588 / 1590

页数：3

共 24 条

[1]

CHEN LJ, 1986, MATER RES SOC S P, V54, P245

[2] EPITAXIAL-GROWTH OF FESI2 IN FE THIN-FILMS ON SI WITH A THIN INTERPOSING NI LAYER [J].

CHENG, HC ;

YEW, TR ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :128-130

[3] EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME [J].

CHENG, HC ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :562-564

[4] EPITAXIAL-GROWTH OF VSI2 ON (111)SI [J].

CHIEN, CJ ;

CHENG, HC ;

NIEH, CW ;

CHEN, LJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1887-1889

[5]

DELGIUDICE M, 1986, MATER RES SOC S P, V54, P91

[6] LOCALIZED EPITAXIAL-GROWTH OF C54 AND C49 TISI2 ON (111)SI [J].

FUNG, MS ;

CHENG, HC ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1312-1314

[7] GERMANIDE FORMATION BY THERMAL-TREATMENT OF PLATINUM FILMS DEPOSITED ON SINGLE-CRYSTAL GE[100] SUBSTRATES [J].

GRIMALDI, MG ;

WIELUNSKI, L ;

NICOLET, MA ;

TU, KN .

THIN SOLID FILMS, 1981, 81 (03) :207-211

[8]

HSIEH YH, UNPUB

[9] ON THE ATOMIC-STRUCTURE OF THE PD2SI/(111)SI INTERFACE [J].

KIELY, CJ ;

CHERNS, D ;

EAGLESHAM, DJ .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1987, 55 (02) :237-252

[10] PHYSICS AND ELECTRONICS OF THE NOBLE-METAL ELEMENTAL-SEMICONDUCTOR INTERFACE FORMATION - A STATUS-REPORT [J].

LELAY, G .

SURFACE SCIENCE, 1983, 132 (1-3) :169-204

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