FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS .4. INTER-CONDUCTION BAND TRANSITIONS

被引：68
作者：
HAGA, E
KIMURA, H
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1964年 / 19卷 / 09期
关键词：
D O I：
10.1143/JPSJ.19.1596
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1596 / &
相关论文
共 15 条
[1]   INFRA-RED ABSORPTION IN GALLIUM PHOSPHIDE-GALLIUM ARSENIDE ALLOYS .1. ABSORPTION IN N-TYPE MATERIAL [J].
ALLEN, JW ;
HODBY, JW .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (526) :315-&
[2]   ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE [J].
BECKER, WM ;
FAN, HY ;
RAMDAS, AK .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2094-&
[3]  
BURDIGAN II, 1960, SOV PHYSSOLID STATE, V1, P1260
[4]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[5]   BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].
EHRENREICH, H .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&
[6]   INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J].
EHRENREICH, H ;
PHILLIPS, JC ;
PHILIPP, HR .
PHYSICAL REVIEW LETTERS, 1962, 8 (02) :59-&
[7]   FUNDAMENTAL REFLECTIVITY OF GAAS AT LOW TEMPERATURE [J].
GREENAWAY, DL .
PHYSICAL REVIEW LETTERS, 1962, 9 (03) :97-&
[8]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) :658-&
[9]   FREE-CARRIER INFRARED ABSORPTION AND DETERMINATION OF DEFORMATION-POTENTIAL CONSTANT IN N-TYPE INSB [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (06) :777-&
[10]  
HAGA E, TO BE PUBLISHED
12