OPTICAL-ABSORPTION COEFFICIENT OF SILICON AT 1.152-MU AT ELEVATED-TEMPERATURES

被引：113
作者：
JELLISON, GE
LOWNDES, DH
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 07期
关键词：
D O I：
10.1063/1.93621
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：594 / 596
页数：3
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共 17 条
[1]   SILICON FILMS AS SELECTIVE ABSORBERS FOR SOLAR-ENERGY CONVERSION [J].
ACKLEY, DE ;
TAUC, J .
APPLIED OPTICS, 1977, 16 (11) :2806-2809
[2]   FINE-STRUCTURE IN OPTICAL-ABSORPTION EDGE OF SILICON [J].
ANAGNOSTOPOULOS, C ;
SADASIV, G .
PHYSICAL REVIEW B, 1973, 7 (02) :733-739
[3]   TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J].
BLUDAU, W ;
ONTON, A ;
HEINKE, W .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1846-1848
[4]   INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1957, 108 (06) :1384-1389
[5]   THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].
GLASSBRENNER, CJ ;
SLACK, GA .
PHYSICAL REVIEW, 1964, 134 (4A) :1058-+
[6]   TIME-RESOLVED OPTICAL-TRANSMISSION OF PULSED LASER-IRRADIATED SILICON [J].
LEE, MC ;
LO, HW ;
AYDINLI, A ;
COMPAAN, A .
APPLIED PHYSICS LETTERS, 1981, 38 (07) :499-501
[7]  
LEE MC, 1981, PHYS REV LETT, V46, P1640
[8]   TIME-RESOLVED OPTICAL-TRANSMISSION AND REFLECTIVITY OF PULSED-RUBY-LASER IRRADIATED CRYSTALLINE SILICON [J].
LOWNDES, DH .
PHYSICAL REVIEW LETTERS, 1982, 48 (04) :267-271
[9]  
LOWNDES DH, 1982, P MATERIALS RES SOC, P73
[10]  
LUKES F, 1959, PHYS CHEM SOLIDS, V11, P342
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