EMBOSSED MONOMODE SINGLE HETEROSTRUCTURE DISTRIBUTED FEEDBACK LEAD CHALCOGENIDE DIODE-LASERS

被引:3
作者
JOHN, J
FACH, A
BOTTNER, H
TACKE, M
机构
[1] Fraunhofer-Institut of Physical Measurement Techniques Heidenhofstrafie 8
关键词
LASERS; SEMICONDUCTOR LASERS;
D O I
10.1049/el:19921399
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Monomode single heterostructure distributed feedback (SH-DFB) lasers with a maximum mode power of up to 0.7 mW were made using an embossing technique for the feedback grating. Measurements of threshold currents show no significant difference between embossed and non-embossed lasers.
引用
收藏
页码:2180 / 2182
页数:3
相关论文
共 9 条
[1]  
FACH A, 1991, OCT P INT S FREIB
[2]  
FACH A, 1991, THESIS A LUDWIGS U F
[3]   SINGLE-MODE MOLECULAR-BEAM EPITAXY GROWN PBEUSETE/PBTE BURIED-HETEROSTRUCTURE DIODE-LASERS FOR CO2 HIGH-RESOLUTION SPECTROSCOPY [J].
FEIT, Z ;
KOSTYK, D ;
WOODS, RJ ;
MAK, P .
APPLIED PHYSICS LETTERS, 1991, 58 (04) :343-345
[4]   MOLECULAR-BEAM EPITAXY-GROWN PBSNTE PBEUSETE BURIED HETEROSTRUCTURE DIODE-LASERS [J].
FEIT, Z ;
KOSTYK, D ;
WOODS, RJ ;
MAK, P .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (12) :860-862
[5]  
GRISAR R, 1991, OCT P INT S FREIB
[6]   BURIED WAVE-GUIDE DOUBLE-HETEROSTRUCTURE PBEUSE-LASERS GROWN BY MBE [J].
SCHLERETH, KH ;
SPANGER, B ;
BOTTNER, H ;
LAMBRECHT, A ;
TACKE, M .
INFRARED PHYSICS, 1990, 30 (05) :449-454
[7]  
SCHLERETH KH, 1992, J VAC SCI TECHNOL, V1310, P114
[8]   PB1-XSNXSE/PB1-X-YEUYSNXSE CORRUGATED DIODE-LASERS [J].
SHANI, Y ;
KATZIR, A ;
TACKE, M ;
PREIER, HM .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (08) :1828-1844
[9]   INFRARED DOUBLE-HETEROSTRUCTURE DIODE-LASERS MADE BY MOLECULAR-BEAM EPITAXY OF PB1-XEUXSE [J].
TACKE, M ;
SPANGER, B ;
LAMBRECHT, A ;
NORTON, PR ;
BOTTNER, H .
APPLIED PHYSICS LETTERS, 1988, 53 (23) :2260-2262