POSITRON IMPLANTATION PROFILES IN ELEMENTAL AND MULTILAYER SYSTEMS

被引：49
作者：
GHOSH, VJ
机构：
[1] Department of Applied Science, Brookhaven National Laboratory, Upton
来源：
APPLIED SURFACE SCIENCE | 1995年 / 85卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(94)00331-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The different Monte Carlo schemes for modeling positron and electron implantation in solids have been briefly reviewed. The main results (mean depth, backscattered fraction, profile shapes) of the different Monte Carlo schemes are compared with experimental data and with each other. Qualitatively, the results of the different Monte Carlo schemes are the same, the most significant difference is in the value of the mean implantation depth. The scaled profiles (for positron implantation in any material) generated by the different Monte Carlo schemes can be superimposed on a universal curve which can be appropriately parameterized. The shapes of the scaled profiles, and the mean depth parameters A and n, are found to be material-dependent.
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页码：187 / 195
页数：9
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