EXCIMER LASER PHOTOABLATION OF SILICON

被引：48

作者：

SHINN, GB ^{[1
]}

STEIGERWALD, F ^{[1
]}

STIEGLER, H ^{[1
]}

SAUERBREY, R ^{[1
]}

TITTEL, FK ^{[1
]}

WILSON, WL ^{[1
]}

机构：

[1] RICE UNIV,RICE QUANTUM INST,HOUSTON,TX 77251

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1273 / 1277

页数：5

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YEH, JTC .

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[6] LASER-INDUCED PLASMAS FOR PRIMARY ION DEPOSITION OF EPITAXIAL GE AND SI FILMS [J].

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GORBATKIN, S ;

GREENE, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :968-974

[7]

OSGOOD RM, 1983, LASER DIAGNOSTICS PH

[8]

POPRAWE R, 1984, THESIS I APPLIED PHY

[9]

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[10]

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