ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS

被引：18

作者：

DAVIES, DE ^{[1
]}

ROOSILD, S ^{[1
]}

LOWE, L ^{[1
]}

机构：

[1] USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01730

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 09期

关键词：

D O I：

10.1016/0038-1101(75)90149-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：733 / 736

页数：4

共 15 条

[1] RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION-IMPLANTED SILICON [J].

DAVIES, DE ;

ROOSILD, S .

APPLIED PHYSICS LETTERS, 1971, 18 (12) :548-&

[2] COMPENSATION FROM IMPLANTATION IN GAAS [J].

DAVIES, DE ;

KENNEDY, JK ;

YANG, AC .

APPLIED PHYSICS LETTERS, 1973, 23 (11) :615-616

[3]

DAVIES DE, 1971, 2ND P INT C ION IMPL, P23

[4]

EISEN FH, 1973, ION IMPLANTATION SEM, P631

[5] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&

[6] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[7] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

HARRIS, JS ;

MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[8]

HUNSPERGER RG, 1971, ION IMPLANTATION, P247

[9] EFFECT OF HYDROGEN CARRIER GAS-FLOW RATE ON ELECTRICAL PROPERTIES OF EPITAXIAL GAAS PREPARED IN A HYDRIDE SYSTEM [J].

KENNEDY, JK ;

POTTER, WD ;

DAVIES, DE .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :233-238

[10]

MUNOZ E, 1970, APPL PHYS LETT, V16, P262, DOI 10.1063/1.1653188

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