PBTE DIODE LASER ( LAMBDA 6.5 MU 12 DEGREES K E )

被引：71

作者：

BUTLER, JF

REDIKER, RH

CALAWA, AR

HARMAN, TC

PHELAN, RJ

STRAUSS, AJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1964年 / 5卷 / 04期

关键词：

D O I：

10.1063/1.1754062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：75 / &

共 16 条

[1] SPONTANEOUS + STIMULATED INFRA-RED EMISSION FROM INDIUM PHOSPHIDE ARSENIDE DIODES ( IN )P AS) DIODES SPONTANEOUS + STIMULATED INFRARED EMISSION 77 DEGREES K E ) [J].

ALEXANDER, FB ;

CARPENTER, DR ;

RILEY, RJ ;

QUINN, HF ;

MANLEY, GW ;

YETTER, LR ;

BIRD, VR ;

PELOKE, JR ;

MCDERMOTT, PS .

APPLIED PHYSICS LETTERS, 1964, 4 (01) :13-&

[2]

BENOIT C, 1963, SOLID STATE COMMUN, V1, P148

[3]

BUTLER JW, TO BE PUBLISHED

[4]

Cuff K. F., 1962, P INT C PHYS SEMICON, P316

[5] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&

[6] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J].

HOLONYAK, N ;

BEVACQUA, SF .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :82-83

[7] MASER ACTION IN INAS DIODES [J].

MELNGAILIS, I .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :176-178

[8] SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS [J].

MELNGAILIS, I ;

STRAUSS, AJ ;

REDIKER, RH .

PROCEEDINGS OF THE IEEE, 1963, 51 (08) :1154-&

[9] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[10] INFRARED INSB LASER DIODE IN HIGH MAGNETIC FIELDS [J].

PHELAN, RJ ;

CALAWA, AR ;

REDIKER, RH ;

KEYES, RJ ;

LAX, B .

APPLIED PHYSICS LETTERS, 1963, 3 (09) :143-145

← 1 2 →