ALN-GAN QUARTER-WAVE REFLECTOR STACK GROWN BY GAS-SOURCE MBE ON (100)GAAS

被引：45
作者：
FRITZ, IJ
DRUMMOND, TJ
机构：
[1] Sandia National Laboratories, Albuquerque, NM 87185-0603
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 01期
关键词：
MOLECULAR BEAM EPITAXIAL GROWTH; NITRIDATION;
D O I：
10.1049/el:19950020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 15 period, wurtzite-structure AlN-GaN reflector stack has been grown on (100) GaAs by gas-source molecular beam epitaxy. A peak reflectance of over 90% has been realised, in agreement with a matrix-method computer simulation. Our results support the feasibility of vertical Fabry-Perot cavity optoelectronics using nitride materials.
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页码：68 / 69
页数：2
相关论文
共 6 条
[1]  
CHADDA S, 1994, MATER RES SOC SYMP P, V326, P353
[2]   REFRACTIVE INDEX OF GAN [J].
EJDER, E .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02) :445-&
[3]   REFLECTIVE FILTERS BASED ON SINGLE-CRYSTAL GAN/ALXGA1-XN MULTILAYERS DEPOSITED USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
KHAN, MA ;
KUZNIA, JN ;
VANHOVE, JM ;
OLSON, DT .
APPLIED PHYSICS LETTERS, 1991, 59 (12) :1449-1451
[4]   CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].
NAKAMURA, S ;
MUKAI, T ;
SENOH, M .
APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689
[5]   REFRACTION INDEX MEASUREMENTS ON AIN SINGLE CRYSTALS [J].
PASTRNAK, J ;
ROSKOVCOVA, L .
PHYSICA STATUS SOLIDI, 1966, 14 (01) :K5-+
[6]   BEHAVIOR OF ELECTRONIC DIELECTRIC CONSTANT IN COVALENT AND IONIC MATERIALS [J].
WEMPLE, SH ;
DIDOMENI.M .
PHYSICAL REVIEW B, 1971, 3 (04) :1338-&
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