ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF ZNSE EPITAXIAL LAYERS GROWN ON GAAS (100) BY ATMOSPHERIC-PRESSURE MOVPE - THE ROLE OF SUBSTRATE-TEMPERATURE

被引：5

作者：

FAN, GH ^{[1
]}

DAVIES, JI ^{[1
]}

MAUNG, N ^{[1
]}

PARROTT, MJ ^{[1
]}

WILLIAMS, JO ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,SOLID STATE CHEM GRP,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 04期

关键词：

D O I：

10.1007/BF02659639

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：251 / 255

页数：5

共 14 条

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[2]

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[6]

FAN G, UNPUB JCS F1

[7] REACTOR PRESSURE-DEPENDENCE OF PROPERTIES OF UNDOPED ZNSE GROWN BY LOW-PRESSURE OMVPE [J].

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[8]

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[9] ELECTRON-MOBILITY AND CARRIER CONCENTRATION OF HETERO-EPITAXIAL ZINC SELENIDE [J].

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[10]

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