ELECTRICAL-CONDUCTIVITY OF SB-DOPED BATIO3

Electrical conductivity of undoped and Sb-doped BaTiO//3 are measured under P//O//2 between 2 multiplied by 10** minus **1**4 and 10**5 Pa in the temperature range 1123-1273 K. Both powers of the oxygen pressure dependence and activation energies of electrical conductivity are determine. It has been concluded that the mechanism of Sb incorporation into BaTiO//3 depends on composition. At lower concentrations (below 0. 15 mol% Sb//2O//5) Sb incorporates into both Ba and Ti sublattices forming donor centers. Above this concentration Sb incorporates preferentially into Ti sites forming acceptor centers.